日本応用磁気学会誌
Online ISSN : 1880-4004
Print ISSN : 0285-0192
ISSN-L : 0285-0192
巨大磁気抵抗効果・トンネル磁気抵抗効果(GMR・TMR)
GdFe合金垂直磁化膜を用いたGMR膜およびTMR膜
池田 貴司綱島 滋
著者情報
ジャーナル オープンアクセス

2000 年 24 巻 4_2 号 p. 563-566

詳細
抄録

We observed hysteresis loops of resistance in GMR and TMR films using GdFe alloy with perpendicular. The MR ratio of GMR film was approximately 0.036% when the thickness of Cu film was 4 nm. Al50Cu50 film with a surface roughness of approximately 0.2 nm was used for the under electrode of TMR film. The Al2O3 film was prepared by direct deposition on an Al2O3 target, and atomic ratio O/Al of the Al2O3 film was 1.52 according to an RBS analysis. The MR ratio of TMR film was approximately 0.95% when the thickness of Al2O3 film was 2.2 nm.

引用文献 (9)
著者関連情報
被引用文献 (2)
© 2000 (社)日本応用磁気学会
前の記事 次の記事
feedback
Top