2000 年 24 巻 4_2 号 p. 563-566
We observed hysteresis loops of resistance in GMR and TMR films using GdFe alloy with perpendicular. The MR ratio of GMR film was approximately 0.036% when the thickness of Cu film was 4 nm. Al50Cu50 film with a surface roughness of approximately 0.2 nm was used for the under electrode of TMR film. The Al2O3 film was prepared by direct deposition on an Al2O3 target, and atomic ratio O/Al of the Al2O3 film was 1.52 according to an RBS analysis. The MR ratio of TMR film was approximately 0.95% when the thickness of Al2O3 film was 2.2 nm.