2001 年 25 巻 3_1 号 p. 155-158
Magnetic tunnel junctions using an epitaxial magnetite (Fe3O4) layer were prepared on Si/SiO2, MgO {100}{110}, and {111} single-crystal substrates, and their properties were studied. Tunnel junctions of U.L./Fe3O4/Al-oxide/CoFe were fabricated by rf sputtering. An epitaxial Fe3O4 layer was grown by sputtering and was found to be highly oriented in it’s crystal axis in the film plane. Each Fe3O4 showed markedly different MR properties depending on the epitaxy planes of the MgO single-crystal substrate. The Fe3O4/Al-oxide/CoFe film deposited on {110} MgO showed the highest MR ratio of 10% when the field was applied along the easy axis of the epitaxial Fe3O4. The MR properties of the film deposited on {110} MgO exhibited a strong angular dependence in the film plane.