特集 : 窒化物半導体表面の研究の現状
GaN(0001)表面の再構成構造
―第一原理計算とSTMによるアプローチ―
2000 年 21 巻 3 号 p. 134-141
詳細
2000 年 21 巻 3 号 p. 134-141
Atomic structures of Ga-polar GaN(0001) reconstructed surfaces have been investigated by using first-principles total energy calculations as well as scanning tunneling microscopy measurements. It is found that the 2×2, 4×4, and 5×5 reconstructed structures of Ga-polar GaN(0001) surfaces consist of Ga adatoms adsorbed on the Ga-terminated surface bilayer.
