表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
論文
HfC(111)清浄表面および水素吸着面の電子状態
山崎 正宏小澤 健一枝元 一之大谷 茂樹
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2001 年 22 巻 7 号 p. 449-454

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The electronic structure of a clean and H-adsorbed HfC(111) surface have been studied by angle-resolved photoemission spectroscopy and Discrete-Variational Xα molecular orbital calculation. A sharp peak in normal-emission spectra of the clean surface is observed at just below the Fermi level, and the peak is ascribed to the emission from a surface state composed of 5d orbitals of surface Hf atoms. Hydrogen adsorbs dissociatively on the HfC(111) surface forming a (1×1) overlayer at the saturation coverage. H-induced bands are observed at 6-7 eV and around the Fermi level. The calculation for the Hf13C13H3 cluster shows that these bands should be ascribed to a H 1s-Hf 5d bonding state and an extrinsic surface state composed of Hf 5d orbitals formed through the modification of the surface potential by H-adsorption, respectively.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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