For a site-selective analysis of trap centers on semiconductor surfaces, a new X-ray absorption spectroscopy using scanning probe detection of capacitance (Scanning capacitance microscope - X-ray absorption fine structure; SCM-XAFS method) is proposed. Since capacitance is sensitive to localized electron, X-ray induced photoionization of trap center can be detected in terms of capacitance change of diode structure. The X-ray photon energy dependence of the capacitance involved in a point contact diode of GaAs sample and Au-coated Si tip of SCM indicates XAFS spectra of the trap centers in the local region. The correspondence of the Fermi level to the specific trap level enhances the SCM-XAFS signal from the trap center, resulting that the site-selective observation of the trap center can be realized by bias control. The double resonance of the surface site selection (Fermi energy resonance) and the resonant X-ray absorption of the selected site (photon energy resonance) enhances the capacitance signal, indicating that the resonant X-ray absorption peaks can be assigned to the surface sites.