抄録
The contact potential differences on various substrates were measured as a function of organic layers thickness. Two different types of structures: traditional ITO/TPD/Alq3/Al structure LiF/Al cathode device. It was found that the introduction of LiF in Alq3/Al interface declined the electron injection barrier, which is supported by I-V characteristics and, in addition, contact potential changed abruptly in 10∼20 Å deposition. A gap state model enables us to explain the shifts of electronic level in organic interface layers.