Reflection high-energy electron diffraction (RHEED) is one of the most powerful techniques for surface investigation. The diffraction pattern is usually used as information source on the surface structure. On the other hand, much attention has not been paid to electron wave field (electron density distribution) of RHEED, which is constructed near the crystal surface by the incident and diffracted electron beams. In order to inspect the existence of the wave filed, Auger electron intensities excited by RHEED have been measured for Si(111)√3×√3-Al surfaces. Auger electron intensities of Si(LVV) and Al(LMM) were measured by a cylindrical mirror analyzer (CMA) and by a retarding field analyzer (RFA) by changing the glancing angle of the incident electron beam. Intensity distributions of the electron wave field were calculated on the basis of the dynamical diffraction theory. It has been found that the experimentally obtained Auger intensity anomalies and calculated wave fields are correlated to each other.