表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
特集:反射高速電子回折の最近の発展
表面におけるRHEED電子密度
川村 隆明
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ジャーナル フリー

2003 年 24 巻 3 号 p. 153-158

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Amethod for calculating wave functions of RHEED based on a multiple scattering theory is described. Reflection matrix is used, which makes it possible to avoid divergence problem when we take account of evanescent waves as well as absorption effect. The electron density that is the square of the absolute value of RHEED wave function is calculated from Si(100)-c(4×2) surface as an example. First the change of electron density with respect to the number of diffracted beams is studied, which shows it is necessary for quantitative analysis to take many beams including evanescent beams. Then the azimuthal dependence is shown. The maximum and minimum positions of the density in the azimuth parallel to dimers are opposite to those in the azimuth normal to dimers. The density also changes as a function of the glancing angle. The maximum density is several times larger than the minimum at the same position from the surface.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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