特集：表面分析時における不可避な損傷の評価
イオン照射による化合物半導体表面の変質現象
2004 年 25 巻 4 号 p. 205-211
詳細
2004 年 25 巻 4 号 p. 205-211
It is well known that ion sputtering induces surface damages on compound semiconductors. These damages are observed as the surface composition and the surface topography changes the extent of which depends on the kinds of materials. For example, indium islands on an argon ion bombarded InP surface grow due to the nucleation kinetics of free indium atoms created by preferential sputtering. Here we report the topics of the surface damage.
