In order to determine the extent of electron irradiation damage on silicon dioxide quantitatively, a simple method of measuring the decomposition cross section of SiO2/Si samples from the Si LVV intensity peaks has been proposed. A 100 nm SiO2 film on Si, damaged by the electron irradiation at primary electron energies of 3, 5, 10 and 15 keV was studied. As a result, CDE(critical dose electrons) were able to be determined from the curve fit to Si LVV metallic peaks from the 2-stage exchange equation. The primary electron energy dependence of CDE for SiO2 could be described by Dc(critical dose electrons) ∝ lnEp(primary electron energy).
