The electron irradiation to non-conductive materials causes building up of surface charge that makes the electron probe analysis, such as AES or EMPA, difficult. On the other hand, small area analysis is needed increasingly especially for insulating portions of semiconductor devices and ceramics (sapphire, quartz glass and so on). Therefore, charge compensation in AES analysis that provides high special resolution has becomes important. This paper introduces the conventional charge compensation methods and shows some applications of using the low energy ion irradiation method.