表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
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非線形誘電率顕微鏡による半導体試料のキャパシタンス測定
安藤 和徳倉持 宏実蓮村 聡渡辺 和俊横山 浩
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2004 年 25 巻 5 号 p. 296-299

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Type of conductively and carrier concentration of a semiconductor sample with three different dopant regions were measured by scanning nonlinear dielectric microscope (SNDM). It is an application of SNDM in to scanning capacitance microscopy with a new detection mechanism that is based on frequency detection. In principle, SNDM includes the SCM function; it is possible to measure not only the conductive type distribution as a conventional SCM, but also the carrier concentration distribution at the same time. As a demonstration, the influence of an adsorbed water layer on the measurements of a semiconductor sample is observed.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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