2004 年 25 巻 6 号 p. 359-362
In Ga+ primary ion TOF-SIMS, the fragment patterns from thin oxidized metal surfaces appear obeying the already proposed rule. The fragment ions MxOy (M: metal) appear in qx ≥ 2y+1 for positive ions and qx ≤ 2y+1 for negative ions (q: valence of M). This paper shows the possibility of the thickness estimation of thin oxide films (SiO2) on Si, from the relative intensity of typical fragment ions from thin oxides or the substrate as identified by the proposed rule in Ga+ primary ion TOF-SIMS spectrum.