表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
論文
シリコン表面上での電荷密度波の格子整合効果とソリトンダイナミクス
守川 春雲松田 巌長谷川 修司
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2004 年 25 巻 7 号 p. 407-415

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A periodic array of metallic In atomic chains on a Si(111) surface, 4×1-In superstructure, has been investigated by angule-resolved photoemission spectroscopy (ARPES) at room temperature and 100 K, and by scanning tunneling microscopy (STM) at 6 K. We have found from ARPES measurements a one-dimensional metallic band folding back at 100 K and leaving an energy gap at Fermi level. This leads to a metal-to-insulator phase transition and thus supports the charge-density-wave (CDW) model rather than an order-disorder model for the 4×1 (room temperature) to 8×'2' (low temperature) phase transition. We also have found a CDW-lattice locking effect from STM observation at 6 K, that is a lack of one-to-one correspondence between the filled- and empty-state images. The effect is interpreted that the CDW is pinned on the frozen lattice in two different ways. Furthermore, dynamics of a highly movable soliton in the CDW has been observed, which is a characteristic of this kind of quasi-one-dimensional systems.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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