表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
論文
NEXAFSによるNi(111)上のh-BN薄膜の電子構造解析
下山 巖馬場 祐治関口 哲弘Krishna G. NATH
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ジャーナル フリー

2004 年 25 巻 9 号 p. 555-561

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In order to study the interaction between h-BN epitaxial monolayer and Ni(111) substrate, near edge X-ray absorption fine structure (NEXAFS) spectroscopy is used. B K-edge NEXAFS spectra of h-BN/Ni(111) show a new π* peak that does not appear in the spectrum of bulk h-BN. The modification of π* band of h-BN is investigated by discrete variational Xα (DV-Xα) molecular orbital calculation with a model cluster. Taking into accounts core hole effect, the origin of the new π* peak is explained in terms of partial density of states calculated by DV-Xα method. Theoretical approach clarifies that π* orbital of h-BN is mainly hybridized with 4p orbital of Ni substrate. This leads to the conclusion that h-BN monolayer is chemisorbed on Ni(111) substrate.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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