Recent ultra-large-scale integration (ULSI) production processes involve fabricating sub-0.1-μm patterns on Si wafers. High-density plasma sources are key technologies for developing precise etching processes. The disadvantages of these technologies include several types of radiation damage caused by the charge build-up of positive ions and electrons or by ultraviolet and X-ray photons during etching. These are very serious problems that must be overcome in the fabrication of future nanoscale devices. To overcome these problems and achieve accurate nanoscale patterning, a high-performance neutral-beam etching system is required.