We have constructed a high-resolution synchrotron-radiation photoemission spectroscopy system combined with a combinatorial laser molecular-beam epitaxy (laser MBE) thin film growth system, in order to realize high-throughput characterization of surface and interface electronic structures of transition-metal oxide thin films. The combinatorial laser MBE chamber is directly connected to the photoemission chamber so that a fabricated thin-film library can be transferred quickly into the photoemission chamber without breaking ultra high-vacuum. The combinatorial laser MBE system can be used for fabricating combinatorial thin film libraries, i. e. using physical masking during deposition to grow films under different deposition conditions with different compositions or with different thicknesses at different parts of a single substrate. Mapping electronic structures can be performed in a single growth-characterization cycle by scanning the synchrotron radiation beam over the thin film libraries. The capabilities of the system have been demonstrated by in-situ photoemission analysis of (1) the La_1−xSr_xMnO₃ thin-film libraries with different compositions, (2) the La_0.6Sr_0.4MnO₃ thin-film libraries with different growth conditions, and (3) the La_0.6Sr_0.4FeO₃/La_0.6Sr_0.4MnO₃ superlattice libraries with different thicknesses.