Superheterointerfaces have been developed as a new class of engineered interface offering another degree of freedom in the design of semiconductor-based quantum structure. Forced epitaxial mating of non-allied semiconductors provides the superheterointerface that allows self-assembly of quantum dots driven by interface instability. An attempt is made to explore the important functions afforded by these unique quantum dots. Enhancement of the otherwise meager light-emitting capability of Si is demonstrated using column III-V/Si superheterointerfaces.