2005 年 26 巻 4 号 p. 180-186
Phenomenological analysis of polarization reversal of ferroelectric thin films has been done on the basis of Landau theory using a lattice model. Polarization hystereses have been obtained in the lattice models in which dead-ferroelectric and built-in field regions are distributed at random. Dependences of saturation polarization and coercive field on remanent polarization are used for comparison between the calculated and experimental data. The polarization fatigue analyzed in the model including bipolar built-in fields agrees best with the experimental data of sol-gel PZT films. So, it is certified that these analyses using polarization lattice model are powerful to clarify the mechanism of polarization reversal dynamics in ferroelectric thin films. These analyses are also expected to be applied to the electrical characterization of ferroelectric capacitors in FeRAM.