CaBi₄Ti₄O₁₅ thin films were prepared using a complex alkoxide precursor, which were synthesized by controlling chemical reactions of individual alkoxides. The thin films crystallized at relatively low temperatures on Pt-coated Si substrates, and the crystal phase and orientation strongly depended on the crystallinity of the Pt bottom electrodes. On the basis of the results on the crystallization of the thin films on the substrates Si, the polar-axis oriented CaBi₄Ti₄O₁₅ films were successfully deposited on Pt foils. The bimorph CaBi₄Ti₄O₁₅/Pt/CaBi₄Ti₄O₁₅ showed excellent ferro-and piezoelectric properties and would open up possibilities for devices as Pb-free ferroelectric materials.