特集：ゲート絶縁膜/Si界面の評価
ヘリウム一貫プロセスによる poly-Si/high-κ 絶縁膜/SiO2/Si 構造のシリサイド化抑制
2005 年 26 巻 5 号 p. 274-279
詳細
2005 年 26 巻 5 号 p. 274-279
Suppression of silicidation in poly-Si/high-κ insulators (ZrO2, HfO2)/SiO2/Si structure by the helium (He) through process that adds He gas during a poly-Si gate process was demonstrated. We found that the He through process of the low-temperature SiH4 flow diluted by He and high-pressure He post-annealing is the most effective means of suppressing not only the thermal degradation of high-κ insulator/SiO2/Si interface but also the silicidation of poly-Si/ultra-thin SiO2/high-κ insulator interface, whereas conventional N2 through process can suppress neither of them. From these results, it is supposed that high-concentration He atoms physically obstruct SiO creation through the quenching of atomic vibration at both SiO2/Si interfaces, thus impeding the first step of silicidation reaction.
