表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
特集:半導体表面
X線回折によるSi(111)-√3×√3-Ag表面構造解析と相転移研究
田尻 寛男隅谷 和嗣高橋 敏男
著者情報
ジャーナル フリー

2005 年 26 巻 6 号 p. 322-328

詳細
抄録

The in-plane structures of the Si(111)-√3×√3-Ag surface at both room temperature (RT) and 50 K are determined by synchrotron X-ray diffraction. The honeycomb chained triangle model with strongly anisotropic thermal vibrations of Ag atoms is preferred over the inequivalent triangle (IET) model at RT. On the other hand, at 50 K, the IET model better explains the experimental results. Not only ordinary Bragg reflection peaks but also broad reflection peaks are observed below the phase transition temperature of Tc=150±4 K accompanied by the formation of the twin IET structure. The critical exponent β obtained from the broad peaks is 0.27±0.03, that is not explained by simple two-dimensional order-disorder transition models. The temperature dependence of the Bragg intensities also supports a displacive transition.

著者関連情報

この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
前の記事 次の記事
feedback
Top