表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
特集:半導体表面
シリコン表面上の半金属Bi超薄膜の同素変態
長尾 忠昭柳沼 晋J.T. SADOWSKI斉藤 峯雄藤川 安仁大野 隆央長谷川 修司櫻井 利夫
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2005 年 26 巻 6 号 p. 344-350

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Group V elements are known to show rich allotropic transformation because their semimetallic bonding character can be easily shifted to either metallic or covalent side, for example by changing the applied pressure. Here, we report on our finding that such an allotropic transformation can be induced also by the change in the thickness of the film of Bi on the scale of several atomic layers. Our scanning tunneling microscopy and electron diffraction experiments revealed that a new two-dimensional allotrope of Bi forms on the Si surface. This pseudocubic {012}-oriented allotrope is stable up to several atomic layers at room temperature. As the thickness increases, the entire volume of the film transforms into a bulk single-crystal (001) phase, due to the increase in the bulk contribution to the cohesion. Based on our ab initio calculations, we propose that the new allotrope consists of black-phosphorus-like puckered-layers stabilized by saturating all the pz dangling bonds in the film. The resulting film is very flat, compared to the growth of any known metal films, reflecting the inherent two-dimensional (2D) structure of the {012} and the (001) phases.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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