We demonstrated a fabrication method for high-density and high-uniformity InAs quantum dots (QDs) on Sb-terminated GaAs(001) buffer layers using molecular beam epitaxy (MBE) of Stranski-Krastanov (SK) mode. The high-density formation of QDs is caused by the initial formation of 2-dimensional wire structures and small islands, which are induced by a surface exchange reaction of Sb atoms and As atoms. The surface segregation of Sb atoms also suppresses coalescence between neighboring QDs. In addition, the non-radiative recombination process is effectively suppressed by developed Sb-termination conditions. Furthermore, we found a new in-plane self-arrangement of high-density InAs QDs on the GaAsSb/GaAs(001) buffer layers.