特集：極薄膜の深さ方向分析
角度分解光電子分光法による深さ方向組成分析の高精度化の試み
2007 年 28 巻 11 号 p. 620-625
詳細
2007 年 28 巻 11 号 p. 620-625
Highly accurate depth profiling has been developed by combining angle-resolved photoelectron spectroscopy with high resolution Rutherford backscattering spectroscopy. In this review, the examples are given for the studies on gate insulator/Si interfacial transition layer and the atomic-oxygen-induced oxidation process of strained Si layer formed on SiGe at low temperature.
