表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
特集:放射光表面科学部会特集 II
Tl吸着Ge(111)表面のラシュバ効果
八田 振一郎有賀 哲也
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2009 年 30 巻 1 号 p. 16-21

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We studied electronic structure and Rashba-type spin splitting in the (3×1) and (1×1) structures on Tl/Ge(111) using angle-resolved photoelectron spectroscopy (ARPES) and first-principles calculation incorporating the spin-orbit interaction. The calculations showed that Tl behaves as a monovalent ion and surface states involved with the Tl-Ge bond are formed mainly by the Tl 6p orbital and the Ge dangling bond. The surface states show k-dependent spin splitting up to ∼200 and ∼800 meV for the (3×1) and (1×1) structures, respectively. The occupied surface states were observed by ARPES. Their spin splittings were predicted to be 150−200 meV, while these were not resolved in the measurement. The largest splitting of ∼800 meV is calculated for the unoccupied states at K on the (1×1) structure. The wavefunction is strongly localized in the Tl overlayer, indicating that the heavy core potential of Tl is essential for the large spin splitting.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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