表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
論文
ビスマス量子薄膜における表面状態による電気伝導
平原 徹松田 巌山崎 詩郎長谷川 修司
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2009 年 30 巻 7 号 p. 374-379

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In situ microscopic-four-point probe conductivity measurements were performed for ultrathin bismuth (Bi) films formed on Si(111)-7×7. From the extrapolation of thickness-dependent conductivity and decrease in conductivity through surface oxidation, we found clear evidence of large surface-state conductivity (σss∼1.5×10−3 Ω−1/¿ at room temperature) in ultrathin Bi(001) films. For the thinnest films (∼25 Å), the transport properties are dominated by the surface states. The temperature dependence of the surface-state conductivity showed a metallic behavior down to 15K. These results point to the possibility to use these Bi surface states for spintronics device applications utilizing the largely Rashba spin-split properties.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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