In order to grow multi-layer graphene for LSI interconnection at the low temperature without any catalyst, the growth temperature dependence of multi-layer graphene formed by photoelectron-assisted plasma chemical vapor deposition is investigated using microscopic Raman spectroscopy and bulk-sensitive X-ray photoelectron spectroscopy. The samples were grown at the temperatures from room temperature (RT) to 700oC by using an Ar/CH4 gas mixture on a Si(001) substrate with native oxide. At temperatures as high as 700oC, shiny black films are obtained, suggesting the growth of graphite. From G band position and FWHM in Raman spectra, it is found that the abundance of graphene sheet is considerably reduced when the growth temperature is lowered below 500oC, leading to an increase of amorphous. This tendency is in accordance with the temperature dependence of the ratio between amorphous graphene components in C 1s spectra.
