Today, LSI process has been one of the most defined techniques to fabricate nanoscale structures. In this field, the top down method, such as lithography is a mainstream approach. However, it is reaching physical and technological limitations as for further size scaling. So the bottom up method has been attracting a lot of attention recently. In order to realize well defined bottom up process, it is quite important to establish a suitable self-assembly technique with a proper substrate as a template. In the present study, the SiO2 fences were fabricated on Si(111) surface by anodic oxidation using an atomic force microscope (AFM) probe. Then the Si surface was etched in ultra low dissolved oxygen water (LOW). We have investigated into the effect of the SiO2 fences on the atomic step shape and the step flow speed as one of way to control the step shape and its position.
