Some specified tips of AFM cantilever show three kinds of vertical atom interchange manipulation phenomena at room temperature. Those are successive Si deposition tip, successive Sn deposition tip, and alternate Si and Sn deposition tip. Former two types of tips correspond to atom pen modes because of successive Si or Sn deposition, while the last type of tip corresponds to atom switch mode because of alternate Si and Sn depositions. Using successive Si deposition tip, we demonstrate rapid construction of embedded atom letters “Si” consisted of relatively small Si adatoms substituted in the surface formed by a little large Sn adatoms at room temperature. Besides, we clarify the reproducibility of other two types of tips by investigating successive noncontact AFM topographic images and frequency shift curves before and after successive vertical atom interchange manipulation.