表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
特集:触媒CVD法による薄膜・プロセス技術
加熱金属触媒表面におけるラジカル生成機構
梅本 宏信
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2010 年 31 巻 4 号 p. 191-195

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Free radical species, such as H, O, OH, CH3, and SiH3, can be ejected efficiently to the gas phase by catalytic decomposition of material gases on heated metal surfaces. The detailed reaction mechanisms for the production of these radicals are still hard to be specified, but the mechanisms can be presumed by measuring the radical densities in the gas phase under various conditions. In this review, the results on the detection of these radical species are summarized, and the possible mechanisms taking place on the catalyst surfaces are discussed. The experimental procedures to identify the radical species are also reviewed shortly. In the production of Si atoms from SiH4, the rate determining step changes from Si desorption to SiH4 adsorption with the increase in the catalyst temperature. In the decomposition of H2O, the OH desorption energy depends on the surface coverage. In O2 systems, decomposition takes place not only on the metal surfaces, but also on the second adsorbed layers.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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