We applied B₁₈H_X⁺ as an alternation of B⁺ or BF₂⁺ to the implantation for source-drain extension in pMOSFETs corresponding to 65 nm and 28 nm technology nodes. We could obtain identical or better characteristics compared to the cases of conventional ions. In addition, we found from blank wafer that larger impact damage to Si atoms in B₁₈H_X⁺ implantation leads to more advantageous R_s−X_j in activation processing with only millisecond annealing.