Metal cluster complexes are chemically-synthesized organometallic compounds, which have a wide range of chemical compositions with high molecular weight. Using a metal-cluster-complex ion source, sputtering characteristics of a silicon substrate bombarded with normally incident Ir4(CO)7+ ions were investigated. Experimental results showed that the sputtering yield at 10 keV was 36, which is higher than that with Ar+ ions by a factor of 24. Further, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples and organic films of poly (methyl methacrylate) (PMMA) was performed. Using the Ir4(CO)7+ ion beam, the depth resolution of 0.9 nm was obtained at 5keV, 45o with oxygen flooding of 1.3×10−4 Pa. Additionally, it was confirmed that Ir4(CO)7+ ion beams significantly enhanced secondary ion intensity in high-mass range.
