MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Secondary Electron Emission Characteristics of MgO Thin Films Prepared by an Advanced Ion-Plating Method
Kazuo Uetani, Hiroshi Kajiyama, Akira Kato, Akiko Takagi, Takanobu Hori, Isao Tokomoto, Yasuhiro Koizumi, Koichi Nose, Yasushi Ihara, Ken-ichi Onisawa, Tetsuroh Minemura
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Keywords: plasma display panel, magnesium oxide, protective layer, advanced ion-plating, secondary electron emission
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2001 Volume 42 Issue 9 Pages 1870-1873

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Abstract

We measured the secondary electron emission (SEE) and the film microstructures of the MgO thin films. The films were deposited by the advanced ion-plating (AIP) method we developed and also a conventional electron beam evaporation (EB) method for reference. The secondary electron yield, γ, defined as a ratio of irradiated ion current to emitted electron current of the samples was measured to be 0.55 for the AIP film and 0.35 for the EB film. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) observations revealed that the AIP film had well-defined columnar structures which were grown from the substrate interface to the film surface. The AIP film with thickness of a 100 nm had (111) preferred orientation, while the crystal orientation of the EB film was not detected. We supposed that the γ value was greatly improved due to the improved crystallinity as well as (111) preferred orientation.

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© 2001 The Japan Institute of Metals and Materials
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