Unusual Photoluminescence Decay of Porous Silicon Prepared by Rapid Thermal Oxidation and Quenching in Liquid Nitrogen
2002 Volume 43 Issue 11 Pages 2832-2837
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2002 Volume 43 Issue 11 Pages 2832-2837
Rapid thermal oxidation and quenching in liquid nitrogen (RTOQN) has been examined on anodized porous silicon (PS). The as-anodized PS samples exhibit a photoluminescence peak at 750 nm that decays instantaneously upon discontinuance of 325-nm He–Cd laser irradiation. In contrast, PS samples after RTOQN show a luminescence peak at 560 nm that decays very slowly (>1 s). In this paper some detailed RTOQN conditions leading to such a slow-decay photoluminescence are defined.
