Photoluminescence around 1.54 μm from Er-containing ZnO at Room Temperature

Zhen Zhou; Takanao Komaki; Atsushi Koizumi; Toshitaka Komori; Masahito Yoshino; Masahiko Morinaga; Yasufumi Fujiwara; Yoshikazu Takeda

doi:10.2320/matertrans.45.2003

Zhen Zhou, Takanao Komaki, Atsushi Koizumi, Toshitaka Komori, Masahito Yoshino, Masahiko Morinaga, Yasufumi Fujiwara, Yoshikazu Takeda

Author information

Zhen Zhou
Venture Business Laboratory, Nagoya University
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
Takanao Komaki
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
Atsushi Koizumi
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
Toshitaka Komori
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
Masahito Yoshino
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
Masahiko Morinaga
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
Yasufumi Fujiwara
Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University
Yoshikazu Takeda
Venture Business Laboratory, Nagoya University
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University

Keywords: ZnO, Er, sintering, photoluminescence (PL), electrical conductivity

JOURNAL FREE ACCESS

2004 Volume 45 Issue 7 Pages 2003-2007

DOI https://doi.org/10.2320/matertrans.45.2003

Details

Abstract

The photoluminescence (PL) around the wavelength of 1.54 μm from the Er-containing ZnO specimens was measured at room temperature by the indirect excitation of the He-Cd laser (325 nm). The PL intensity varied greatly with the Er concentration and the specimen preparation conditions as well. The specimens with the Er content of about 2.6 at%, sintered at 1623 K, and cooled quickly to room temperature in air showed the highest PL intensity at 1.534 μm. The local structure of the optically active Er centers in ZnO was also discussed, and the appropriate optically active center might be the Er ions existing in the grain boundaries.

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