MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
First-Principles Calculations of Schottky Barrier Heights of Monolayer Metal/6H-SiC{0001} Interfaces
Shingo TanakaTomoyuki TamuraKazuyuki OkazakiShoji IshibashiMasanori Kohyama
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2006 Volume 47 Issue 11 Pages 2690-2695

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Abstract

Schottky barrier heights (SBHs) of monolayer metal/6H-SiC{0001} interfaces have been calculated by the first-principles projector augment-wave (PAW) method in order to examine the dependence on metal species as well as surface termination of SiC. Generally, p-type SBHs of the C-terminated (000-1) interfaces are smaller than those of the Si-terminated (0001) interfaces, because of the interface dipoles caused by substantial charge transfer. The SBHs of the Si-terminated interfaces range within a relatively narrow energy region without clear correlation with metal electronegativity, although those of the C-terminated interfaces show rather specific dependence on metal electronegativity except for systems with Fe and Co. The different dependence on the metal species for the Si- and C-terminated interfaces has been analyzed from the interface electronic structure as compared with previous theoretical models and experiments.

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© 2006 The Japan Institute of Metals and Materials
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