Effects of angular factors on film formation in a sputter-deposition system were studied. Two kinds of angles relating to the geometry of the sputter system were taken as the anglar factors. On is the radiation angle θ of particles sputtered from a target, and the other the incident angle, δ, at which the particles enter the surface. For this purpose, twenty Si (100) substrates were set in a vacuum system in the corresponding angular conditions. Ag or SiO₂ films were simultaneously deposited on their surfaces using the Xe⁺ (0.5KeV or 1.5KeV) ion beam sputter-deposition method. Morphology and thickness of the films were examined by SEM and EPMA. Strong dependence was found of θ and δ on the morphology and the deposition rate of the film. These results are discussed from two points of view : (1) the angular dependence of the energy distribution on the sputtered particles, and (2) the angular and energy dependence of the sticking probability of the particles onto the substrate. The latter is explained with the energy selective deposition mechanism of the substrates inclined by δ.