Recent Progress in Surface Analysis by SIMS

Hifumi Tamura

doi:10.1380/jsssj.1.2

Hifumi Tamura

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JOURNAL FREE ACCESS

1980 Volume 1 Issue 1 Pages 2-18

DOI https://doi.org/10.1380/jsssj.1.2

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Published: June 20, 1980 Received: May 20, 1980 Available on J-STAGE: August 07, 2009 Accepted: May 20, 1980 Advance online publication: - Revised: -
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Date of correction: August 07, 2009 Reason for correction: - Correction: CITATION Details: Wrong : (1) E. W. Müller, T. T. Tsong : Field Ion Micros-copy, Elsevier, New York (1969).
(3) R. Castaing and G. Slodzian : J. Microscopie (Paris) 1, (1962) 395.
(5) J. Mattauch, R. Herrzog : Z. Physik, 89, (1934) 786.
(6) J. Mattauch, Phys. Rev.: 50,(1936) 617.
8) R. E. Honig : Adv. Mass Spectrom. 6, (1974) 337.
(9) H. Tamura, T. Kondo, T. Hirano : Proc 6th Internl Conf. X-ray Optics and Microanalysis, ed. G. Shinoda, K. Kohra, T. Ichinokawa, (1971), 424, Osaka.
(10) H. Liebl, J. Appl. Phys.: 38, 13, (1967) 5277.
(11) J. M. Rouberol : Proc 6th Annual ASMS Conf. Mass Spec., Pittsbergh, Pa., (1968).
(13) C. W. Magee : J. Electrochem, Soc. 126, (1979) 660.
(14) H. A. Storms, K. F. Brown, and J. D. Stein : Report on the second Japan-United States Joint Seminar on SIMS, Takarazuka, Japan, ed. M. Someno and D. B. Wittry, (1978) 267.
(15) H. Tamura, T. Kondo, I. Kanomata, K. Nak-amura and Y. Nakajima : Proc. 6th Internl. Vacuum Congr., 1974, Japan J. Appl. Phys. Suppl. 2, Pt. 1 (1974).
(16) G. Slodzian, Ann, Phys (Paris) : 9, (1964) 591.
(17) Y. Ueda and J. Okano : Mass Spectrosc. 20, (1972) 185.
(18) K. Nakamura, S. Aoki, Y. Nakajima, H. Doi and H. Tamura : Mass Spectrosc. 20, (1972) 1.
(19) C. A. Andersen, H. J. Roden, C. F. Robinson : J. Appl. Phys., 40, (1969) 3419.
(21) H. W. Werner : Vacuum, 24, 10, (1975) 493.
(22) R. Castaing, J. F. Hennequin : Advance in Mass Spectrometry (ed. A Quayle), V, (1972) 419.
(23) P. Joyes and R. Castaing : C. R. Acad. Sci., 263, (1966) B 384.
(24) P. Joyle and J. F. Hennequin : J. Physique., 29, (1960) 243.
(25) J. M. Schroer : Surface Sci., 34, (1973) 571.
(26) H. W. Werner : Advances in Appl. Spectrosc., (ed. Grove) 7A, (1969) 239, Plennum Press, New York.
(28) A. Benninghoven and A. Muller : Phys. Lett., 40A, (1972) 169.
(29) W. F. vd Weg and D. J. Bierman : Physica, 44, (1969) 177.
(30) C. A. Andersen and J. R. Hinthone : Science., 175, (1972) 843.
(31) A. Benninghoven : Z Phys., 230, (1970) 403.
(32) J. C. C. Tsai, J. M. Morabito : Surface Sci., 44, (1974) 247.
(33) R. K. Lewis, J. M. Morabito, J. C. C. Tsai : Appl. Phys. Lett., 23, 5, (1973) 260.
(34) K. F. J. Heinrich, D. E. Newbury : Ed. Proc. Workshop on SIMS and IMMA, “Secondary Ion Mass Spectrometry”; (1975), NBS Special Publication 427.
(35) J. Lindhard, M. Scharff and H. E. Schiott : Mat. Fys. Meld. Don. Vid. Selsk 33, (1963). 1.
(36) J. C. C. Tsai, J. M. Morabito : Surface Sci. 44, (1974) 247.
(37) W. S. Johnson and J. F. Gibbons : LSS Projected Range Statics in Semiconduetors Stanford Univ. Book Store. Stanford, Calif., (1970).
(38) T. Ishitani, R. Shimizu, Phys Lett.: 46A, (1974) 487.
(39) C. Catana, J. S. Colligon and G. Carter : J. Mater. Sci., 7, (1972) 467.
(41) C.A. Andersen and J.R. Hinthone: Anal. Chem., 45, (1973) 1421.
(42) T.Ishitani, H. Tamura, and T. Kondo:Anal. Chem., 47, (1975) 1294.
(43) H.Kobayashi, K.Suzuki, K.Yukawa, H. Tamura and T. Ishitani: Rev. Sci. Instrum. 48, (1977) 10.
(44) A. Benninghoven, C.A. Evans, Jr.,R. Apowell, R. Shimizu, H.A. Stoms: Secondary Ion Mass Spectrometry SIMS II, SpringerVerlag, Berlin Heidelberg New York (1979).

Right : (1) E. W. Müller, T. T. Tsong : Field Ion Micros-copy, Elsevier, New York (1969).
(3) R. Castaing and G. Slodzian : J. Microscopie (Paris) 1, (1962) 395.
(5) J. Mattauch, R. Herrzog : Z. Physik, 89, (1934) 786.
(6) J. Mattauch, Phys. Rev.: 50,(1936) 617.
8) R. E. Honig : Adv. Mass Spectrom. 6, (1974) 337.
(9) H. Tamura, T. Kondo, T. Hirano : Proc 6th Internl Conf. X-ray Optics and Microanalysis, ed. G. Shinoda, K. Kohra, T. Ichinokawa, (1971), 424, Osaka.
(10) H. Liebl, J. Appl. Phys.: 38, 13, (1967) 5277.
(11) J. M. Rouberol : Proc 6th Annual ASMS Conf. Mass Spec., Pittsbergh, Pa., (1968).
(13) C. W. Magee : J. Electrochem, Soc. 126, (1979) 660.
(14) H. A. Storms, K. F. Brown, and J. D. Stein : Report on the second Japan-United States Joint Seminar on SIMS, Takarazuka, Japan, ed. M. Someno and D. B. Wittry, (1978) 267.
(15) H. Tamura, T. Kondo, I. Kanomata, K. Nak-amura and Y. Nakajima : Proc. 6th Internl. Vacuum Congr., 1974, Japan J. Appl. Phys. Suppl. 2, Pt. 1 (1974).
(16) G. Slodzian, Ann, Phys (Paris) : 9, (1964) 591.
(17) Y. Ueda and J. Okano : Mass Spectrosc. 20, (1972) 185.
(18) K. Nakamura, S. Aoki, Y. Nakajima, H. Doi and H. Tamura : Mass Spectrosc. 20, (1972) 1.
(19) C. A. Andersen, H. J. Roden, C. F. Robinson : J. Appl. Phys., 40, (1969) 3419.
(21) H. W. Werner : Vacuum, 24, 10, (1975) 493.
(22) R. Castaing, J. F. Hennequin : Advance in Mass Spectrometry (ed. A Quayle), V, (1972) 419.
(23) P. Joyes and R. Castaing : C. R. Acad. Sci., 263, (1966) B 384.
(24) P. Joyle and J. F. Hennequin : J. Physique., 29, (1960) 243.
(25) J. M. Schroer : Surface Sci., 34, (1973) 571.
(26) H. W. Werner : Advances in Appl. Spectrosc., (ed. Grove) 7A, (1969) 239, Plennum Press, New York.
(28) A. Benninghoven and A. Muller : Phys. Lett., 40A, (1972) 169.
(29) W. F. vd Weg and D. J. Bierman : Physica, 44, (1969) 177.
(30) C. A. Andersen and J. R. Hinthone : Science., 175, (1972) 843.
(31) A. Benninghoven : Z Phys., 230, (1970) 403.
(32) J. C. C. Tsai, J. M. Morabito : Surface Sci., 44, (1974) 247.
(33) R. K. Lewis, J. M. Morabito, J. C. C. Tsai : Appl. Phys. Lett., 23, 5, (1973) 260.
(34) K. F. J. Heinrich, D. E. Newbury : Ed. Proc. Workshop on SIMS and IMMA, “Secondary Ion Mass Spectrometry”; (1975), NBS Special Publication 427.
(35) J. Lindhard, M. Scharff and H. E. Schiott : Mat. Fys. Meld. Don. Vid. Selsk 33, (1963). 1.
(36) J. C. C. Tsai, J. M. Morabito : Surface Sci. 44, (1974) 247.
(37) W. S. Johnson and J. F. Gibbons : LSS Projected Range Statics in Semiconduetors Stanford Univ. Book Store. Stanford, Calif., (1970).
(38) T. Ishitani, R. Shimizu, Phys Lett.: 46A, (1974) 487.
(39) C. Catana, J. S. Colligon and G. Carter : J. Mater. Sci., 7, (1972) 467.
(41) C.A. Andersen and J.R. Hinthone: Anal. Chem., 45, (1973) 1421.
(42) T.Ishitani, H. Tamura, and T. Kondo:Anal. Chem., 47, (1975) 1294.
(43) H.Kobayashi, K.Suzuki, K.Yukawa, H. Tamura and T. Ishitani: Rev. Sci. Instrum. 48, (1977) 10.
(44) A. Benninghoven, C.A. Evans, Jr.,R. Apowell, R. Shimizu, H.A. Stoms: Secondary Ion Mass Spectrometry SIMS II, SpringerVerlag, Berlin Heidelberg New York (1979).

Abstract

Secondary ion mass spectrometry (SIMS) provides a unique capability for performing threedimensional microchemical characterization with a single instrument. In using SIMS to investigate the composition of solids the sample is sputtered away by ion bombardment. The sputtered particles immediately ejected as ions are characteristic of the sample composition. When separated in a mass spectrometer, these ions can be used in principle for quantitative analysis. The production of these secondary ions, some recently developed ion probe instrumentation, some new analytical techniques, and some new analytical applications are briefly described.

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