Medium energy ion scattering (MEIS, 100 keV) has become of interest in the field of the surface and the interface structural analysis of metals, semiconductors, metals on semiconductors and so on, because of its high depth resolution from the surface to the bulk. Also we can determine the atomic positions very precisely (± 0. 001 nm) from the channeling and blocking effects.
The principles of ion scattering for the structure analysis some measuring equipments and experimental results are reviewed with a comparison of the high energy ion scattering (HEIS, MeV) and low energy ion scattering (ISS, keV).