Transparent conductive F doped SnO₂ films used for the electrode of amorphous Si solar cells were investigated in regard to their durability against hydrogen plasma. In general, both transparency and conductivity of SnO₂ films are deteriorated with exposure to hydrogen plasma. However, it was found that the conductivity can be improved at the initial stage of the exposure mainly due to the change in electron mobility. The increase in mobility is explained in terms of reduction of the barrier potential due to termination of the dangling bonds with hydrogen atoms at the grain boundaries. The results obtained from SIMS, XPS, Auger microprobe analyses are described in detail.