Investigation of Semiconductor Surfaces Using Soft-X-ray Photoelectron Spectroscopy

Jiro MATSUO; Akira SATO; Noriaki NAKAYAMA

doi:10.1380/jsssj.12.110

軟X線光電子分光法を用いた半導体表面層の評価

松尾二郎, 佐藤章, 中山範明

著者情報

ジャーナルフリー

1991 年 12 巻 2 号 p. 110-114

DOI https://doi.org/10.1380/jsssj.12.110

詳細

発行日: 1991/03/20 受付日: 1990/03/29 J-STAGE公開日: 2009/08/07 受理日: 1990/03/29 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 論文抄録訂正内容: Wrong : A soft X-ray photoelectron spectroscopy with Zr Mζ radiation is used to investigate semiconductor surfaces. Zr Mζ photons of 151.4eV energy have good surface sensitivity, because Si2p photoelectron energy was about 50eV where the escape depth reaches minimum (0.5nm). The surface sensitivity was 10times higher than these in conventional techniques, and this result was in good agreement with that of theoretical calculation according to the difference of electron escape depth. Thanks to this high surface sensitivity, the Surface Core Level Shift (SCLS) was found to be -0.5eV in Si (100) 2×1 surface. We also used this technique to study the oxygen adsorbed surfaces layers at room temperature on Si (100) 2×1. The significant difference in photoelectron spectra was observed after annealing above 650°C.
Right : A soft X-ray photoelectron spectroscopy with Zr Mζ radiation is used to investigate semiconductor surfaces. Zr Mζ photons of 151.4eV energy have good surface sensitivity, because Si2p photoelectron energy was about 50eV where the escape depth reaches minimum (0.5nm). The surface sensitivity was 10times higher than these in conventional techniques, and this result was in good agreement with that of theoretical calculation according to the difference of electron escape depth. Thanks to this high surface sensitivity, the Surface Core Level Shift (SCLS) was found to be -0.5eV in Si (100) 2×1 surface. We also used this technique to study the oxygen adsorbed surfaces layers at room temperature on Si (100) 2×1. The significant difference in photoelectron spectra was observed after annealing above 650°C.

訂正日: 2009/08/07 訂正理由: - 訂正箇所: 著者情報訂正内容: 訂正前 : 松尾二郎¹⁾, 章佐藤¹⁾, 中山範明¹⁾
訂正後 : 松尾二郎¹⁾, 佐藤章¹⁾, 中山範明¹⁾

抄録

A soft X-ray photoelectron spectroscopy with Zr Mζ radiation is used to investigate semiconductor surfaces. Zr Mζ photons of 151.4eV energy have good surface sensitivity, because Si2p photoelectron energy was about 50eV where the escape depth reaches minimum (0.5nm). The surface sensitivity was 10times higher than these in conventional techniques, and this result was in good agreement with that of theoretical calculation according to the difference of electron escape depth. Thanks to this high surface sensitivity, the Surface Core Level Shift (SCLS) was found to be -0.5eV in Si (100) 2×1 surface. We also used this technique to study the oxygen adsorbed surfaces layers at room temperature on Si (100) 2×1. The significant difference in photoelectron spectra was observed after annealing above 650°C.

責任著者(Corresponding author)

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