イリジウム酸化物薄膜の光電解析出
1991 年 12 巻 10 号 p. 641-643
詳細
1991 年 12 巻 10 号 p. 641-643
When TiO2 semiconductor electrode was irradiated in electrolytic solution containing Ir2 (SO4)3, a thin film of iridium oxide was selectively formed at the irradiated region. Property of the deposited films was examined by XPS, SEM and electrochemical measurement. It was concluded that the deposition of the iridium oxide was caused by electrochemical oxidation by means of photoexited holes of the n-type semiconductor electrode.
