We have carried out the Auger depth profiling analysis of GaAs/AlAs multilayer structure using the peaks of GaMVV and A1LVV. Since the two peaks of the specimen overlapped each other, we made peak separation with peak synthesis technique using a non-negative least-square curve fit containing a peak-shift correction. The top-hat filtered spectra were used for the calculation to remove their background. This procedure gave excellent results for the peak separation especially for the sample which had a large difference in elemental concentration.