Initial Growth Stages of Ge on Si(111)

Yukinobu SHINOUA; Yoshihiro KOBAYASHI; Hiroki HIBINO; Kiyomasa SUGII

doi:10.1380/jsssj.14.105

Si(111)上のGeの成長初期過程

篠田幸信, 小林慶裕, 日比野浩樹, 杉井清昌

著者情報

ジャーナルフリー

1993 年 14 巻 2 号 p. 105-112

DOI https://doi.org/10.1380/jsssj.14.105

詳細

発行日: 1993/03/10 受付日: 1992/10/13 J-STAGE公開日: 2009/08/07 受理日: 1992/11/30 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 引用文献情報訂正内容: Wrong : 1) T. P. Pearsall, J. Bevk, L. C. Feldman, J. M. Bonar and P. J. Mannaerts : Phys. Rev. Lett. 58, 729 (1987).
2) J. -P. Noël, N. L. Rowell, D. C. Houghton and D. D. Perovic : Appl. Phys. Lett. 57, 1037 (1990).
3) K. Shoji, M. Hyodo, H. Ueba and C. Tatsuyama : Jpn. J. Appl. Phys. 22, L 200 (1983).
4) K. Miki, H. Okumura, K. Sakamoto, H. Matuhara, T. Sakamoto and Y. Yoshida : J. Cryst. Growth 111, 902 (1991).
5) S. S. Iyer, R. R. Pukite, J. C. Tsang and M. W. Copel : J. Cryst. Growth 95, 439 (1989).
6) P. M. J. Marëe, K. Nakagawa, F. M. Mulders, W. M. Frenken and K. L. Kavanagh : Surf. Sci. 191, 305 (1987).
7) T. Narusawa and W. M. Gibson : Phys. Rev. Lett. 47, 1459 (1981).
8) T. Narusawa and W. M. Gibson : J. Vacuum Sci. Technol. 20, 709 (1982).
9) H. -J. Gossmann, L. C. Feldman and W. M. Gibson : Phys. Rev. Lett. 53, 294 (1984).
10) H. -J. Gossmann and L. C. Feldman : Surf. Sci. 155, 413 (1985).
11) H. -J. Gossmann and L. C. Feldman : Phys. Rev. B 32, 6 (1985).
12) Y. Shinoda, N. Shimizu, H. Hibino, T. Nishiokar C. Heimlich, Y. Kobayashi, S. Ishizawa, K. Sugii and M. Seki : Appl. Surf. Sci. 60/61, 112 (1992).
14) K. Kajiyama, Y. Tanishiro and K. Takayanagi Surf. Sci. 222, 38 (1989).
15) K. Kajiyama, Y. Tanishiro and K. Takayanagi : Surf. Sci. 222, 47 (1989).
16) D. W. Pashley, J. W. Menter and G. A. Basset : Nature 179, 752 (1957).
17) G. A. Basset, J. W. Menter and D. W. Pashley : Proc. Roy. Soc. A 246, 345 (1958).
18) A. Ishizaka and Y. Shiraki : J. Electrochem. Soc. 33, 666 (1986).
19) U. Köhler, O. Jusko, G. Pietsch, B. Müller and M. Henzler : Surf. Sci. 248, 321 (1991).
20) E. R. Johnson and S. M. Christian : Phys. Rev. 95, 560 (1954).
21) M. Zinke-Allmang, L. C. Feldman, S. Nakahara and B. A. Davidson : Phys. Rev. B 39, 7848 (1989).
22) G. L. McVay and A. R. DuCharme : J. Appl. Phys. 44, 1409 (1973).
23) R. M. Burger and R. P. Donovan, Ed : “Fundamentals of Silicon Integrated Device Technology” 1, (Prentice-Hall Inc., Englewood Cliffs, New Jersey, 1967).
24) H. Poppa : J. Vac. Sci. Technol. 2, 42 (1965) .

Right : 1) T. P. Pearsall, J. Bevk, L. C. Feldman, J. M. Bonar and P. J. Mannaerts : Phys. Rev. Lett. 58, 729 (1987).
2) J. -P. Noël, N. L. Rowell, D. C. Houghton and D. D. Perovic : Appl. Phys. Lett. 57, 1037 (1990).
3) K. Shoji, M. Hyodo, H. Ueba and C. Tatsuyama : Jpn. J. Appl. Phys. 22, L 200 (1983).
4) K. Miki, H. Okumura, K. Sakamoto, H. Matuhara, T. Sakamoto and Y. Yoshida : J. Cryst. Growth 111, 902 (1991).
5) S. S. Iyer, R. R. Pukite, J. C. Tsang and M. W. Copel : J. Cryst. Growth 95, 439 (1989).
6) P. M. J. Marëe, K. Nakagawa, F. M. Mulders, W. M. Frenken and K. L. Kavanagh : Surf. Sci. 191, 305 (1987).
7) T. Narusawa and W. M. Gibson : Phys. Rev. Lett. 47, 1459 (1981).
8) T. Narusawa and W. M. Gibson : J. Vacuum Sci. Technol. 20, 709 (1982).
9) H. -J. Gossmann, L. C. Feldman and W. M. Gibson : Phys. Rev. Lett. 53, 294 (1984).
10) H. -J. Gossmann and L. C. Feldman : Surf. Sci. 155, 413 (1985).
11) H. -J. Gossmann and L. C. Feldman : Phys. Rev. B 32, 6 (1985).
12) Y. Shinoda, N. Shimizu, H. Hibino, T. Nishiokar C. Heimlich, Y. Kobayashi, S. Ishizawa, K. Sugii and M. Seki : Appl. Surf. Sci. 60/61, 112 (1992).
14) K. Kajiyama, Y. Tanishiro and K. Takayanagi Surf. Sci. 222, 38 (1989).
15) K. Kajiyama, Y. Tanishiro and K. Takayanagi : Surf. Sci. 222, 47 (1989).
16) D. W. Pashley, J. W. Menter and G. A. Basset : Nature 179, 752 (1957).
17) G. A. Basset, J. W. Menter and D. W. Pashley : Proc. Roy. Soc. A 246, 345 (1958).
18) A. Ishizaka and Y. Shiraki : J. Electrochem. Soc. 33, 666 (1986).
19) U. Köhler, O. Jusko, G. Pietsch, B. Müller and M. Henzler : Surf. Sci. 248, 321 (1991).
20) E. R. Johnson and S. M. Christian : Phys. Rev. 95, 560 (1954).
21) M. Zinke-Allmang, L. C. Feldman, S. Nakahara and B. A. Davidson : Phys. Rev. B 39, 7848 (1989).
22) G. L. McVay and A. R. DuCharme : J. Appl. Phys. 44, 1409 (1973).
23) R. M. Burger and R. P. Donovan, Ed : “Fundamentals of Silicon Integrated Device Technology” 1, (Prentice-Hall Inc., Englewood Cliffs, New Jersey, 1967).
24) H. Poppa : J. Vac. Sci. Technol. 2, 42 (1965) .

抄録

Initial growth stages of Ge on Si (111) are studied from the viewpoint of intermixing of Si into the epitaxial Ge layer. Defect formation in the Ge islands was characterized by using moiré patterns taken by transmission electron microscopy (TEM). Ge islands are grown by MBE on Si(111) surfaces with an SPE-grown buffer layer, which is expected to prevent intermixing between the epitaxial Ge layer and the Si substrate. Anomalous Si incorporation into the Ge islands is analyzed by TEM moiré fringe analysis. Dislocations are visualized by means of extra 'half-lines' of the moiré fringes, and thus Burgers vectors are determined. Stacking faults are observed by a displacement of the fringe spacings Coalescence of the Ge islands and dislocation generation from the contact part of the islands are detected.

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