Formation of Hydrophobic Surface on Si(111) in Aqueous Hydrofluoric Immersion Process

Yoshihiro SUGITA; Satoru WATANABE

doi:10.1380/jsssj.16.521

HFによる酸化物除去に伴うSi(111)表面の疎水化過程

杉田義博, 渡辺悟

著者情報

ジャーナルフリー

1995 年 16 巻 8 号 p. 521-529

DOI https://doi.org/10.1380/jsssj.16.521

詳細

発行日: 1995/08/10 受付日: 1995/04/12 J-STAGE公開日: 2009/08/07 受理日: 1995/06/12 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 論文抄録訂正内容: Wrong : The hydrophobic process of the Si(111) surface was investigated by FT-IR attenuated total reflection (ATR) method using a Si prism. By changing the immersion time in hydrofluoric solution, thermally grown silicon-dioxides and some chemically grown oxides on the Si(111) surface were removed. The variations in the ATR spectra of Si-H and O-H were compared with those in the contact angle (CA) of water on the surfaces. After the removal of the silicon-dioxide film, a hydrophobic surface is formed and Si-H and Si-OH structures appear. The surface structures having low CA (10&sim;40°) depend on the way to form the oxides. The degree of hydrophobia represented by CA does not directly relate to the quantity of Si-OH. At higher CA (more than 40°) surfaces, the main surface reaction is etching of Si. The growth of terraces and reduction of step-edge structures create a smooth surface and Si-OH structures are gradually removed at the same time. The re-oxidation and the etching process in hydrofluoric solution seem to occur on these surfaces.
Right : The hydrophobic process of the Si(111) surface was investigated by FT-IR attenuated total reflection (ATR) method using a Si prism. By changing the immersion time in hydrofluoric solution, thermally grown silicon-dioxides and some chemically grown oxides on the Si(111) surface were removed. The variations in the ATR spectra of Si-H and O-H were compared with those in the contact angle (CA) of water on the surfaces. After the removal of the silicon-dioxide film, a hydrophobic surface is formed and Si-H and Si-OH structures appear. The surface structures having low CA (10∼40°) depend on the way to form the oxides. The degree of hydrophobia represented by CA does not directly relate to the quantity of Si-OH. At higher CA (more than 40°) surfaces, the main surface reaction is etching of Si. The growth of terraces and reduction of step-edge structures create a smooth surface and Si-OH structures are gradually removed at the same time. The re-oxidation and the etching process in hydrofluoric solution seem to occur on these surfaces.

抄録

The hydrophobic process of the Si(111) surface was investigated by FT-IR attenuated total reflection (ATR) method using a Si prism. By changing the immersion time in hydrofluoric solution, thermally grown silicon-dioxides and some chemically grown oxides on the Si(111) surface were removed. The variations in the ATR spectra of Si-H and O-H were compared with those in the contact angle (CA) of water on the surfaces. After the removal of the silicon-dioxide film, a hydrophobic surface is formed and Si-H and Si-OH structures appear. The surface structures having low CA (10∼40°) depend on the way to form the oxides. The degree of hydrophobia represented by CA does not directly relate to the quantity of Si-OH. At higher CA (more than 40°) surfaces, the main surface reaction is etching of Si. The growth of terraces and reduction of step-edge structures create a smooth surface and Si-OH structures are gradually removed at the same time. The re-oxidation and the etching process in hydrofluoric solution seem to occur on these surfaces.

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