Cu/Si(111) 成長における水素終端効果
1996 年 17 巻 7 号 p. 401-405
詳細
1996 年 17 巻 7 号 p. 401-405
The hydrogen mediated growth process of Cu films on Si(111) surfaces is observed by medium energy ion scattering (MEIS), RHEED and AES. At room temperature, the role of hydrogen is not so prominent in the growth process. At high temperatures, however, formation of islands is observed. This indicates that the surface diffusion of Cu atoms is enhanced by the hydrogen termination.
