表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
ITO薄膜のX線光電子および逆光電子スペクトル
折田 政寛坂井 裕之竹内 恵山口 洋一藤本 俊幸福本 夏生小島 勇夫
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1996 年 17 巻 8 号 p. 440-446

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The relationship between the electronic structures of ITO thin films and their optical and electric properties has been investigated by using X-ray photoelectron spectroscopy (XPS) and bremsstrahlung Isochromat spectroscopy (BIS). The spectra of the state densities of valence and conduction bands obtained from XPS and BIS are consistent with those calculated by DV-X molecular orbital method. The state density of the conduction band obtained from BIS increased gradually above Ef. This is related to high carrier mobility and high transparency in the short wavelength region of the ITO film. Curve fitting of the O1s XPS spectra revealed a peak at 531.1 eV embedded in the central part of the spectra, We propose that the oxygen atoms having the binding energy of 531.1 eV to the tin ions which produce carrier electrons in the conduction bands.

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