Development of STM-based Nanofabrication and Measurement System for Nano Devices

Daisuke FUJITA; Hanyu SHENG; Qidu JIANG; Zhenchao DONG; Hitoshi NEJOH

doi:10.1380/jsssj.18.460

STMによるナノデバイス作製・評価システムの開発

藤田大介, Hanyu SHENG, Qidu JIANG, Zhenchao DONG, 根城均

著者情報

ジャーナルフリー

1997 年 18 巻 8 号 p. 460-465

DOI https://doi.org/10.1380/jsssj.18.460

詳細

発行日: 1997/08/10 受付日: 1997/02/28 J-STAGE公開日: 2009/08/07 受理日: 1997/05/14 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 引用文献情報訂正内容: Wrong : 1) S. Datta: “Electron Transport in Mesoscopic Systems” (Cambridge University Press, Cambridge, 1995) p. 246.
2) D.V. Averin and K.K. Likharev: “Single Charge Tunneling”, ed. by H. Grabert and M.H. Devoret (Plenum Press, New York, 1992) p. 311.
3) H.G. Graighead: “Physics of Nanostructures”, ed. by J.H. Davies and A.R. Long (SUSSP Publications, Edinburgh, 1992) p. 21.
4) D.M. Eigler and K. Schweizer: Nature 344, 524 (1990).
5) M.F. Crommie, C.P. Lutz and D.M. Eigler: Science 262, 218 (1993).
6) M.A. McCord and D.D. Awschalom: Appl. Phys. Lett. 57, 2153 (1990).
7) T.-C. Shen, C. Wang, J.W. Lyding and JR. Tucker: Appl. Phys. Lett. 66, 976 (1995).
8) T. Teuschler, K. Mahr, S. Miyazaki, M. Hundhausen and L. Ley: Appl. Phys. Lett. 67. 3144 (1995).
9) L. Stockman, G. Neuttiens, C. Van Haesendonck and Y. Bruynseraede: Appl. Phys. Lett. 62, 2935 (1993).
10) M. Wendel, S. Kühn, H. Lorenz, J.P. Kotthaus and M. Holland: Appl. Phys. Lett. 65, 1775 (1995).
11) H.J. Mamin, P. H. Guethner and D. Ruger: Phys. Rev. Lett. 65, 2418 (1990).
12) P. Radojkovic, M. Schwartzkopff, M. Enachescu, E. Stefanov, E. Hartman and F. Koch: J. Vac. Sci. Technol. B 14, 1229 (1996).
13) K. Matsumoto, M. Ishii, K. Segawa and Y. Oka: Appl. Phys. Lett. 68, 34 (1996).
14) D. Fujita, Q.-D. Jiang and H. Nejoh: J. Vac. Sci. Technol. B 14, 3413 (1996).
15) D. Fujita, Q.-D. Jiang, Z.-C. Dong, H.-Y. Sheng and H. Nejoh: Nanotechnology (1997) in press.
16) D. Fujita, Q.-D. Jiang, Z.-C. Dong, H.-Y. Sheng and H. Nejoh: Ultramicroscopy (1997) to be published.

Right : 1) S. Datta: “Electron Transport in Mesoscopic Systems” (Cambridge University Press, Cambridge, 1995) p. 246.
2) D.V. Averin and K.K. Likharev: “Single Charge Tunneling”, ed. by H. Grabert and M.H. Devoret (Plenum Press, New York, 1992) p. 311.
3) H.G. Graighead: “Physics of Nanostructures”, ed. by J.H. Davies and A.R. Long (SUSSP Publications, Edinburgh, 1992) p. 21.
4) D.M. Eigler and K. Schweizer: Nature 344, 524 (1990).
5) M.F. Crommie, C.P. Lutz and D.M. Eigler: Science 262, 218 (1993).
6) M.A. McCord and D.D. Awschalom: Appl. Phys. Lett. 57, 2153 (1990).
7) T.-C. Shen, C. Wang, J.W. Lyding and JR. Tucker: Appl. Phys. Lett. 66, 976 (1995).
8) T. Teuschler, K. Mahr, S. Miyazaki, M. Hundhausen and L. Ley: Appl. Phys. Lett. 67. 3144 (1995).
9) L. Stockman, G. Neuttiens, C. Van Haesendonck and Y. Bruynseraede: Appl. Phys. Lett. 62, 2935 (1993).
10) M. Wendel, S. Kühn, H. Lorenz, J.P. Kotthaus and M. Holland: Appl. Phys. Lett. 65, 1775 (1995).
11) H.J. Mamin, P. H. Guethner and D. Ruger: Phys. Rev. Lett. 65, 2418 (1990).
12) P. Radojkovic, M. Schwartzkopff, M. Enachescu, E. Stefanov, E. Hartman and F. Koch: J. Vac. Sci. Technol. B 14, 1229 (1996).
13) K. Matsumoto, M. Ishii, K. Segawa and Y. Oka: Appl. Phys. Lett. 68, 34 (1996).
14) D. Fujita, Q.-D. Jiang and H. Nejoh: J. Vac. Sci. Technol. B 14, 3413 (1996).
15) D. Fujita, Q.-D. Jiang, Z.-C. Dong, H.-Y. Sheng and H. Nejoh: Nanotechnology (1997) in press.
16) D. Fujita, Q.-D. Jiang, Z.-C. Dong, H.-Y. Sheng and H. Nejoh: Ultramicroscopy (1997) to be published.

抄録

We have developed a nanofabrication and measurement system for nano-devices such as single electron transistors. This system can perform all of the required processes in ultrahigh vacuum, such as preparation of substrate surface, fabrication of metallic electrodes on a substrate using a precise mask deposition equipment, nanofabrication of gold dots and lines using a scanning tunneling microscope (STM), and measurement of electric properties of the nano-devices using a low temperature four-contact probe apparatus. Using a novel atom transfer method from the gold tips, highly reproducible fabrication of gold nano-dots and nano-lines have been demonstrated here. Some technical innovations required for this development are briefly introduced.

責任著者(Corresponding author)

訂正情報

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