GaAs-STM Probe Formed by Focused Ion Beam

Shigeru MORIBAYASHI; Kazuhisa SUEOKA; Kenji TANAHASHI; Koichi MUKASA

doi:10.1380/jsssj.18.485

FIBによるGaAs-STM探針の作製

森林茂, 末岡和久, 棚橋研二, 武笠幸一

著者情報

ジャーナルフリー

1997 年 18 巻 8 号 p. 485-489

DOI https://doi.org/10.1380/jsssj.18.485

詳細

発行日: 1997/08/10 受付日: 1997/02/24 J-STAGE公開日: 2009/08/07 受理日: 1997/06/02 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 引用文献情報訂正内容: Wrong : 2) I. V. Shvets, R. Wiesendanger, D. Bürgler, G. Tarrach, H. -J. Güntherodt and J. M. D. Coey: J. Appl. Phys. 71, 5498 (1992).
3) A. A. Minakov and I.S. Shets: Surf. Sci. Lett. L377-L381, 236 (1990).
4) S. F. Alvarado and P. Renaud: Phys. Rev. Lett. 68, 1387 (1992).
5) K. Sueoka, K. Mukasa and K. Hayakawa: Jpn. J. Appl. Phys. 32, 2989 (1993).
6) R. Jansen, M. C. M. M. van der Wielen, M. W. J. Prins, D. L. Abraham and H. van Kempen: J. Vac. Sci. Technol. B 12, 2133 (1994).
7) K. Yamaguchi, K. Okamoto and S. Yugo: J. Appl. Phys. 77, 6061 (1995).
8) T. Nakanishi, H. Aoyagi, H. Horinaka, Y. Kamiya, T. Kato, S. Nakamura, T. Saka and M. Tsubata: Phys. Lett. A 158, 345 (1991).
10) R. D. Mackenzie: J. Vac. Sci. Technol. B9, 2561 (1991).
11) M. J. Vasile, D. A. Grigg, J. E. Griffith, E. A. Fitzgerald and P. E. Russell: Rev. Sci. Instrum. 62, 2167 (1991).
12) M. J. Vasile, C. Biddick and H. Huggins: Appl. Phys. Lett. 64, 575 (1994).
14) H. Ximen, R. K. Defreez, J. Orloff, R. A. Elliott, G. A. Evans, N. W. Carlson, M. Lurie and D. P. Bour: J. Vac. Sci. Technol. B 8, 1361 (1990).
15) H. Miyake, Y. Yuba, K. Gamo, S. Namba, R. Mimura and R. Aihara: Jpn. J. Appl. Phys. 27, L2037 (1988).
16) T. Taguchi, S. Okumura, S. Hiyamizu and S. Yamamoto: FUJITSU LIMITED 21(1985).

Right : 2) I. V. Shvets, R. Wiesendanger, D. Bürgler, G. Tarrach, H. -J. Güntherodt and J. M. D. Coey: J. Appl. Phys. 71, 5498 (1992).
3) A. A. Minakov and I.S. Shets: Surf. Sci. Lett. L377-L381, 236 (1990).
4) S. F. Alvarado and P. Renaud: Phys. Rev. Lett. 68, 1387 (1992).
5) K. Sueoka, K. Mukasa and K. Hayakawa: Jpn. J. Appl. Phys. 32, 2989 (1993).
6) R. Jansen, M. C. M. M. van der Wielen, M. W. J. Prins, D. L. Abraham and H. van Kempen: J. Vac. Sci. Technol. B 12, 2133 (1994).
7) K. Yamaguchi, K. Okamoto and S. Yugo: J. Appl. Phys. 77, 6061 (1995).
8) T. Nakanishi, H. Aoyagi, H. Horinaka, Y. Kamiya, T. Kato, S. Nakamura, T. Saka and M. Tsubata: Phys. Lett. A 158, 345 (1991).
10) R. D. Mackenzie: J. Vac. Sci. Technol. B9, 2561 (1991).
11) M. J. Vasile, D. A. Grigg, J. E. Griffith, E. A. Fitzgerald and P. E. Russell: Rev. Sci. Instrum. 62, 2167 (1991).
12) M. J. Vasile, C. Biddick and H. Huggins: Appl. Phys. Lett. 64, 575 (1994).
14) H. Ximen, R. K. Defreez, J. Orloff, R. A. Elliott, G. A. Evans, N. W. Carlson, M. Lurie and D. P. Bour: J. Vac. Sci. Technol. B 8, 1361 (1990).
15) H. Miyake, Y. Yuba, K. Gamo, S. Namba, R. Mimura and R. Aihara: Jpn. J. Appl. Phys. 27, L2037 (1988).
16) T. Taguchi, S. Okumura, S. Hiyamizu and S. Yamamoto: FUJITSU LIMITED 21(1985).

抄録

Focused Ion Beam (FIB) technique is applicable to prepare a sharp tip for Scanning Tunneling Microscope (STM). Our simple calculation shows that radius of the FIB milled tip apex can be reduced to be smaller than the spot size of the FIB. In this study, a GaAs tip, which has a potential ability to resolve information about electron spin polarization in tunneling currents, was formed by means of the FIB. The FIB produces damaged layers on the semiconductor surface, which are thicker than those on metals and thus prevent electrons from tunneling through the layers. After the damaged tip was dipped in HCl solution which can selectively remove the damaged layer, Highly Oriented Pyrolytic Graphite (HOPG) surface atoms were observed and the I-V curves showed characteristics of the semiconductor.

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